? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c24a i dm t c = 25 c 96 a i a t c = 25 c24a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 5 v/ns p d t c = 25 c 568 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting force 20..120 / 4.5..27 n/lb. weight 6 g power mosfet n-channel enhancement mode avalanche rated v dss = 1000v i d25 = 24a r ds(on) 400m ds99201c(09/10) IXTX24N100 features ? international standard package ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? avalanche rated ? low package inductance advantages ? plus 247 tm package for clip or spring mounting ? space savings ? high power density applications ? dc-dc converters ? battery chargers ? switch-mode and resonant-mode power supplies ? dc choppers ? ac motor drives ? temperature and lighting controls g = gate d = drain s = source tab = drain plus247 tab symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 400 m
IXTX24N100 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 15 27 s c iss 8700 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 785 pf c rss 315 pf t d(on) 35 ns t r 35 ns t d(off) 75 ns t f 21 ns q g(on) 267 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 52 nc q gd 142 nc r thjc 0.22 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 24 a i sm repetitive, pulse width limited by t jm 96 a v sd i f = 24a, v gs = 0v, note 1 1.5 v t rr 850 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 24a, -di/dt = 100a/ s, v r = 100v, v gs = 0v dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain 3 - source plus 247 tm (ixtx) outline
? 2010 ixys corporation, all rights reserved IXTX24N100 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0123456789 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 5v 6v 7v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 02468101214161820 v ds - volts i d - amperes v gs = 10v 5v 6v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTX24N100 ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: f_24n100(9x)4-14-10 fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 3.03.54.04.55.05.56.06.57.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.20.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 q g - nanocoulombs v gs - volts v ds = 500v i d = 12a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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